Single Wafer Plasma Nitridation / Oxidation System “MARORA®”
Overview
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*MARORA is a registered trademark of KOKUSAI ELECTRIC CORPORATION. -
MARORA® is a suitable tool to provide gate dielectric film for next generation DRAM, logic or flash memory.
With our original plasma generation method (MMT *), MARORA® generates a plasma with low electron temperature (approx. 1eV) efficiently and realizes plasma damage free process.*MMT＝Modified Magnetron Typed
- Process Applications
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Nitridation
- Nitridation of dielectric film
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Oxidataion
- Forming thin oxidation film
- Selective oxidation
- Anisotropic oxidation
Features
- High throughput – 2 times better productivity than previous model
- MMT plasma source is equipped – Realized highly uniform plasma at the surface of substrate and low electron temperature of plasma (~1eV)
- Wide range temperature control – High temperature heater is installed
- Various application – In addition to plasma oxidation or plasma nitridation, Selective Oxidation , oxidation of Si without oxidation of metal, is capable